Cart
0
Product
Products
(empty)
No products
To be determined
Shipping
$0.00
Total
Product successfully added to your shopping cart
Quantity
Total
There are 0 items in your cart.
There is 1 item in your cart.
Total products
Total shipping
To be determined
Total
New
Reduced price!
View larger
View larger
EIA JESD 22-C101F:2013
New product
EIA JESD 22-C101F:2013
Field-Induced Charged-Device Model Test Method for Electrostatic-Discharge-Withstand Thresholds of Microelectronic ComponentsMore info
All packaged semiconductor components, thin film circuits, surface acoustic wave (SAW) components, opto-electronic components, hybrid integrated circuits (HICs), and multi-chip modules (MCMs) containing any of these components are to be evaluated according to this standard. The test methods described in this standard may also be used to evaluate components that are shipped as wafers or bare chips. To perform the tests, the components must be assembled into a package similar to that expected in the final application. The package used shall be recorded.
| Author | EIA |
|---|---|
| Editor | EIA |
| Document type | Standard |
| Format | File |
| ICS | 31.080.01 : Semiconductor devices in general
|
| Number of pages | 18 |
| Replace | EIA JESD 22-C101E (2009-12) |
| Year | 2013 |
| Document history | EIA JESD 22-C101F (2013-10) |
| Country | USA |
| Keyword | EIA JESD 22;EIA 22;EIA 22.C101F;22;EIA JESD22-C101F |